Main Facilities and Equipment

Used for quantitative analysis of impurities in solutions such as plating solution. Since the sample is ionized in high-temperature plasma, it is hardly affected by coexisting elements and can be quantified in ppm units. It is also characterized by the large number of elements that can be analyzed.

Used to analyze impurities and ingredients in plating solutions. By passing a mixed sample containing plating solution through a stationary phase column, each ingredient is separated according to its interaction with the column.

It is used to analyze impurities and ingredients in plating solution. By passing a mixed sample containing plating solution through a capillary tube, each ingredient is separated according to the difference in swimming velocity.

This equipment connects 17 to 75 µm diameter gold, silver, aluminum, and copper wires to semiconductor components. The ability to switch between wedge bonding and ball bonding allows for testing of a wide variety of components.

Performs bonding strength and break mode analysis of solder balls and bonding wires bonded on a board. Various sizes of solder balls are available, and pull and shear tests can be performed.

Used for observation of microstructures on the sample surface, the instrument is equipped with an EDX detector as well as secondary electrons and reflection electrons. It is also possible to observe the surface of precious metal plating on the order of tens of nanometers and to perform elemental analysis of plating cross sections processed with a focused ion beam.

This device combines the functions of focused ion beam processing and electron microscopy. Microfabrication is performed by etching the sample surface with an ion beam, The electron microscope is used to observe the cross sectional structure of the sample. It is used to check the cross sectional structure of small areas of various samples.

It is used for elemental analysis of a few nanometers on the topmost surface of a sample. Equipped with an argon sputtering device, depth analysis at the micrometer level is also possible, which is useful for measuring the diffusion of underlying metal and trace amounts of foreign objects.